- Product Model TRS3E65H,S1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description G3 SIC-SBD 650V 3A TO-220-2L
- Classification Single Diodes
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Inventory:1900
Pricing:
- 1 1.61
- 50 1.3
- 100 1.07
- 500 0.9
- 1000 0.77
- 2000 0.73
- 5000 0.7
- 10000 0.68
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 199pF @ 1V, 1MHz
- Current - Average Rectified (Io) 3A
- Supplier Device Package TO-220-2L
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 3 A
- Current - Reverse Leakage @ Vr 45 µA @ 650 V
