- Product Model TRS6E65H,S1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description G3 SIC-SBD 650V 6A TO-220-2L
- Classification Single Diodes
-
PDF
Inventory:1900
Pricing:
- 1 2.25
- 50 1.81
- 100 1.49
- 500 1.26
- 1000 1.07
- 2000 1.02
- 5000 0.98
- 10000 0.98
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 392pF @ 1V, 1MHz
- Current - Average Rectified (Io) 6A
- Supplier Device Package TO-220-2L
- Operating Temperature - Junction 175°C
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.35 V @ 6 A
- Current - Reverse Leakage @ Vr 70 µA @ 650 V
