Inventory:1860
Pricing:
  • 1 34.97
  • 30 28.99
  • 120 27.18

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 67A (Tc)
  • Rds On (Max) @ Id, Vgs 43mOhm @ 38.9A, 15V
  • Power Dissipation (Max) 278W (Tc)
  • Vgs(th) (Max) @ Id 3.6V @ 10.7mA
  • Supplier Device Package TO-247-4L
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 15V
  • Vgs (Max) +19V, -8V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 113 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds 3460 pF @ 1000 V
  • Qualification AEC-Q101

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