- Product Model FQT1N60CTF-WS
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET N-CH 600V 200MA SOT223-4
- Classification Single FETs, MOSFETs
-
PDF
- 4000 0.28
- 8000 0.26
- 12000 0.24
- 28000 0.24
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
- Rds On (Max) @ Id, Vgs 11.5Ohm @ 100mA, 10V
- Power Dissipation (Max) 2.1W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package SOT-223-4
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V
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