- Product Model APTM120DA56T1G
- Brand Microsemi Corporation
- RoHS No
- Description MOSFET N-CH 1200V 18A SP1
- Categories Single FETs, MOSFETs
-
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- In Stock 1500
Pricing:
- 1 42.71
Technical Details
- Package / Case SP1
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 672mOhm @ 14A, 10V
- Power Dissipation (Max) 390W (Tc)
- Vgs(th) (Max) @ Id 5V @ 2.5mA
- Supplier Device Package SP1
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7736 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
