- Product Model SI4190BDY-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description N-CHANNEL 100 V (D-S) MOSFET SO-
- Classification Single FETs, MOSFETs
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Inventory:10358
Pricing:
- 2500 0.94
- 5000 0.9
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 12A (Ta), 17A (Tc)
- Rds On (Max) @ Id, Vgs 9.3mOhm @ 10A, 10V
- Power Dissipation (Max) 3.8W (Ta), 8.4W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 50 V