- Product Model G130N06S
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET, N-CH,60V,9A,RD(MAX)<12M@
- Classification Single FETs, MOSFETs
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Inventory:5490
Pricing:
- 4000 0.22
- 8000 0.21
- 12000 0.19
- 28000 0.19
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Tc)
- Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
- Power Dissipation (Max) 2.6W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-SOP
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3068 pF @ 30 V