Technical Details

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 14.5A (Tc)
• Rds On (Max) @ Id, Vgs 86mOhm @ 4.5A, 10V
• Power Dissipation (Max) 2W (Ta), 20W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-HSMT (3.2x3)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 50 V