- Product Model GT750P10K
- Brand Goford Semiconductor
- RoHS Yes
- Description P-CH,-100V,-24A,RD(MAX)<85M@-10V
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.39
- 5000 0.37
- 12500 0.35
- 25000 0.35
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Rds On (Max) @ Id, Vgs 85mOhm @ 20A, 10V
- Power Dissipation (Max) 79W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1940 pF @ 50 V
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