- Product Model GT019N04D5
- Brand Goford Semiconductor
- RoHS Yes
- Description N40V,120A,RD<2.8M@10V,VTH1.0V~2.
- Classification Single FETs, MOSFETs
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Inventory:6390
Pricing:
- 5000 0.29
- 10000 0.27
- 25000 0.26
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 10A, 10V
- Power Dissipation (Max) 120W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-DFN (4.9x5.75)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 20 V