- Product Model GT100N12K
- Brand Goford Semiconductor
- RoHS Yes
- Description N120V,65A,RD<12M@10V,VTH2.5V~3.5
- Classification Single FETs, MOSFETs
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Inventory:4000
Pricing:
- 2500 0.66
- 5000 0.63
- 12500 0.6
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Rds On (Max) @ Id, Vgs 12mOhm @ 35A, 10V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2911 pF @ 60 V