- Product Model G050P03T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-30V,-85A,RD(MAX)<5M@-10V,VTH-1
- Classification Single FETs, MOSFETs
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Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 85A (Tc)
- Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
- Power Dissipation (Max) 100W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6922 pF @ 15 V
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