- Product Model RD3P03BBHTL1
- Brand ROHM Semiconductor
- RoHS No
- Description NCH 100V 35A, TO-252, POWER MOSF
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.76
- 5000 0.73
- 12500 0.71
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 23mOhm @ 35A, 10V
- Power Dissipation (Max) 50W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 50 V
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