- Product Model G075N06MI
- Brand Goford Semiconductor
- RoHS Yes
- Description N60V, 110A,RD<7M@10V,VTH1.0V~4.0
- Classification Single FETs, MOSFETs
-
PDF
Inventory:2257
Pricing:
- 1600 0.62
- 3200 0.58
- 4800 0.55
- 11200 0.53
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
- Power Dissipation (Max) 160W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6443 pF @ 30 V