- Product Model GT045N10M
- Brand Goford Semiconductor
- RoHS Yes
- Description N100V, 120A,RD<4.5M@10V,VTH2V~4V
- Classification Single FETs, MOSFETs
-
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Inventory:2194
Pricing:
- 800 1.02
- 1600 0.86
- 2400 0.82
- 5600 0.79
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 30A, 10V
- Power Dissipation (Max) 180W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4198 pF @ 50 V
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