- Product Model GT100N04D3
- Brand Goford Semiconductor
- RoHS Yes
- Description N40V, 13A,RD<10M@10V,VTH1.0V~2.5
- Classification Single FETs, MOSFETs
-
PDF
- 5000 0.13
- 10000 0.12
- 25000 0.12
- 50000 0.11
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Tc)
- Rds On (Max) @ Id, Vgs 10mOhm @ 5A, 10V
- Power Dissipation (Max) 23W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package 8-DFN (3.15x3.05)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 642 pF @ 20 V
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