- Product Model IPB029N06NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH 40<-<100V
- Classification Single FETs, MOSFETs
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Inventory:2313
Pricing:
- 800 1.03
- 1600 0.87
- 2400 0.83
- 5600 0.8
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 26A (Ta), 120A (Tc)
- Rds On (Max) @ Id, Vgs 2.9mOhm @ 70A, 10V
- Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 80µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 30 V