- Product Model ISC800P06LMATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH 40<-<100V
- Classification Single FETs, MOSFETs
- 5000 0.94
- 10000 0.91
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 19.6A (Tc)
- Rds On (Max) @ Id, Vgs 80mOhm @ 16A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 2V @ 724µA
- Supplier Device Package PG-TDSON-8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 14.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 30 V
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