Technical Details

• Package / Case DirectFET™ Isometric ME
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 44A (Ta), 211A (Tc)
• Rds On (Max) @ Id, Vgs 0.82mOhm @ 50A, 10V
• Power Dissipation (Max) 2.8W (Ta), 63W (Tc)
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package MG-WDSON-8-904
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 20 V