- Product Model IPF016N06NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH 40<-<100V
- Classification Single FETs, MOSFETs
-
PDF
- 800 1.39
- 1600 1.18
- 2400 1.12
- 5600 1.08
Technical Details
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Ta), 223A (Tc)
- Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
- Power Dissipation (Max) 3.8W (Ta), 188W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 129µA
- Supplier Device Package PG-TO263-7-U02
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 30 V
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