Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 45A (Tj)
• Rds On (Max) @ Id, Vgs 16.2mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id 5.15V @ 20mA
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +20V, -7V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 149 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 800 V