- Product Model IPP018N10N5XKSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V
- Classification Single FETs, MOSFETs
-
PDF
- 1 6.12
- 50 4.85
- 100 4.16
- 500 3.7
- 1000 3.16
- 2000 2.98
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 205A (Tc)
- Rds On (Max) @ Id, Vgs 1.83mOhm @ 100A, 10V
- Power Dissipation (Max) 3.8W (Ta), 375W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 270µA
- Supplier Device Package PG-TO220-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V
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