- Product Model GT110N06D3
- Brand Goford Semiconductor
- RoHS Yes
- Description N60V, 35A,RD<11M@10V,VTH1.0V~2.4
- Classification Single FETs, MOSFETs
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Inventory:6499
Pricing:
- 5000 0.23
- 10000 0.21
- 25000 0.21
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V
- Power Dissipation (Max) 25W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package 8-DFN (3.15x3.05)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1059 pF @ 30 V