- Product Model GT10N10
- Brand Goford Semiconductor
- RoHS Yes
- Description N100V, 7A,RD<140M@10V,VTH1.5V~2.
- Classification Single FETs, MOSFETs
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Inventory:5892
Pricing:
- 2500 0.16
- 5000 0.15
- 12500 0.14
- 25000 0.14
- 62500 0.13
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Rds On (Max) @ Id, Vgs 140mOhm @ 3.5A, 10V
- Power Dissipation (Max) 17W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 206 pF @ 50 V