- Product Model IQE013N04LM6SCATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description OPTIMOS LOWVOLTAGE POWER MOSFET
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 6000 1.29
Technical Details
- Package / Case 8-PowerWDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31A (Ta), 205A (Tc)
- Rds On (Max) @ Id, Vgs 1.35mOhm @ 20A, 10V
- Power Dissipation (Max) 2.5W (Ta), 107W (Tc)
- Vgs(th) (Max) @ Id 2V @ 51µA
- Supplier Device Package PG-WHSON-8-1
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 20 V