- Product Model IPT012N08NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description MOSFET
- Classification Single FETs, MOSFETs
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Inventory:5339
Pricing:
- 1800 2.83
- 3600 2.66
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 39A (Ta), 351A (Tc)
- Rds On (Max) @ Id, Vgs 1.23mOhm @ 150A, 10V
- Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 267µA
- Supplier Device Package PG-HSOF-8-10
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 40 V