- Product Model G2K3N10G
- Brand Goford Semiconductor
- RoHS Yes
- Description N100V, 2.5A,RD<220M@10V,VTH1V~2V
- Classification Single FETs, MOSFETs
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Inventory:2692
Pricing:
- 1000 0.1
- 2000 0.09
- 5000 0.08
- 10000 0.08
- 25000 0.07
- 50000 0.06
- 100000 0.06
Technical Details
- Package / Case TO-243AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
- Rds On (Max) @ Id, Vgs 220mOhm @ 2A, 10V
- Power Dissipation (Max) 1.5W (Tc)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package SOT-89
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 436 pF @ 50 V
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