- Product Model BSS123
- Brand Anbon Semiconductor
- RoHS Yes
- Description N-CHANNEL ENHANCEMENT MODE MOSFE
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.02
- 6000 0.02
- 9000 0.02
- 30000 0.02
- 75000 0.01
- 150000 0.01
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
- Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V
- Power Dissipation (Max) 350mW (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-23
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 1.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 14 pF @ 50 V
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