- Product Model TPS1100DR
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 15V 1.6A 8SOIC
- Classification Single FETs, MOSFETs
Inventory:1500
Pricing:
- 2500 0.67
- 5000 0.64
- 12500 0.61
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
- Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
- Power Dissipation (Max) 791mW (Ta)
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Supplier Device Package 8-SOIC
- Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
- Vgs (Max) +2V, -15V
- Drain to Source Voltage (Vdss) 15 V
- Gate Charge (Qg) (Max) @ Vgs 5.45 nC @ 10 V