- Product Model HN4B102J(TE85L,F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description PB-F POWER TRANSISTOR SMV MOQ=30
- Classification Bipolar Transistor Arrays
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Inventory:4362
Pricing:
- 3000 0.22
- 6000 0.21
- 9000 0.2
Technical Details
- Package / Case SC-74A, SOT-753
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 750mW
- Current - Collector (Ic) (Max) 1.8A, 2A
- Voltage - Collector Emitter Breakdown (Max) 30V
- Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
- Supplier Device Package SMV
