- Product Model RS6P100BHTB1
- Brand ROHM Semiconductor
- RoHS No
- Description NCH 100V 100A, HSOP8, POWER MOSF
- Classification Single FETs, MOSFETs
-
PDF
- 2500 1.51
- 5000 1.45
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 5.9mOhm @ 90A, 10V
- Power Dissipation (Max) 104W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package 8-HSOP
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 50 V
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