- Product Model SISS5710DN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description N-CHANNEL 150 V (D-S) MOSFET POW
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.74
- 6000 0.71
- 9000 0.69
Technical Details
- Package / Case PowerPAK® 1212-8S
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7.2A (Ta), 26.2A (Tc)
- Rds On (Max) @ Id, Vgs 31.5mOhm @ 10A, 10V
- Power Dissipation (Max) 4.1W (Ta), 54.3W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package PowerPAK® 1212-8S
- Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 75 V
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