Technical Details

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max) 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
• Frequency - Transition 100MHz
• Supplier Device Package DFN1110D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 65 V
• Power - Max 340 mW
• Qualification AEC-Q101