- Product Model G35N02K
- Brand Goford Semiconductor
- RoHS Yes
- Description N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
- Classification Single FETs, MOSFETs
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Inventory:1717
Pricing:
- 2500 0.15
- 5000 0.14
- 12500 0.13
- 25000 0.13
- 62500 0.12
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 1.2V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 10 V