- Product Model 06N06L
- Brand Goford Semiconductor
- RoHS Yes
- Description N60V,RD(MAX)<42M@10V,RD(MAX)<46M
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 11423
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.09
- 75000 0.08
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5.5A
- Rds On (Max) @ Id, Vgs 42mOhm @ 3A, 10V
- Power Dissipation (Max) 960mW
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-23-3L
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 765 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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