- Product Model 1002
- Brand Goford Semiconductor
- RoHS Yes
- Description N100V,RD(MAX)<250M@10V,RD(MAX)<2
- Classification Single FETs, MOSFETs
Inventory:4345
Pricing:
- 3000 0.09
- 6000 0.08
- 9000 0.07
- 30000 0.07
- 75000 0.06
- 150000 0.06
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A
- Rds On (Max) @ Id, Vgs 250mOhm @ 2A, 10V
- Power Dissipation (Max) 1.3W
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package SOT-23
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 387 pF @ 10 V
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