- Product Model 630A
- Brand Goford Semiconductor
- RoHS Yes
- Description N200V,RD(MAX)<280M@10V,VTH1V~3V,
- Classification Single FETs, MOSFETs
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Inventory:3870
Pricing:
- 2500 0.3
- 5000 0.29
- 12500 0.27
- 25000 0.26
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
- Power Dissipation (Max) 83W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 25 V