- Product Model GCMS080B120S1-E1
- Brand SemiQ
- RoHS Yes
- Description SIC 1200V 80M MOSFET & 10A SBD S
- Classification Single FETs, MOSFETs
-
PDF
- 1 24.74
- 10 21.98
- 100 19.23
- 500 16.41
Technical Details
- Package / Case SOT-227-4, miniBLOC
- Mounting Type Chassis Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Power Dissipation (Max) 142W (Tc)
- Vgs(th) (Max) @ Id 4V @ 10mA
- Supplier Device Package SOT-227
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 58 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1374 pF @ 1000 V
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