- Product Model IPF024N10NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V
- Classification Single FETs, MOSFETs
-
PDF
- 800 2.74
- 1600 2.34
- 2400 2.21
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 227A (Tc)
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
- Power Dissipation (Max) 250W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 169µA
- Supplier Device Package PG-TO263-7-14
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 154 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 50 V
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