- Product Model IPB050N10NF2SATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V
- Classification Single FETs, MOSFETs
-
PDF
- 800 1.12
- 1600 0.95
- 2400 0.9
- 5600 0.87
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 103A (Tc)
- Rds On (Max) @ Id, Vgs 5.05mOhm @ 60A, 10V
- Power Dissipation (Max) 150W (Tc)
- Vgs(th) (Max) @ Id 3.8V @ 85µA
- Supplier Device Package PG-TO263-3
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
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