- Product Model SISA10BDN-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description N-CHANNEL 30-V (D-S) MOSFET POWE
- Classification Single FETs, MOSFETs
-
PDF
- 3000 0.36
- 6000 0.34
- 9000 0.33
- 30000 0.33
Technical Details
- Package / Case PowerPAK® 1212-8
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 26A (Ta), 104A (Tc)
- Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V
- Power Dissipation (Max) 3.8W (Ta), 63W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 250µA
- Supplier Device Package PowerPAK® 1212-8
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) +20V, -16V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 15 V
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