- Product Model NDSH50120C
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description DIODE SIL CARB 1.2KV 53A TO247-2
- Classification Single Diodes
-
PDF
- 1 20.23
- 30 16.38
- 120 15.41
- 510 13.97
Technical Details
- Package / Case TO-247-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 3691pF @ 1V, 100kHz
- Current - Average Rectified (Io) 53A
- Supplier Device Package TO-247-2
- Operating Temperature - Junction -55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 1.75 V @ 50 A
- Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Related Products
DIODE SIL CARB 1.2KV 46A TO247-2
Inventory: 420
DIODE SIL CARB 650V 37A TO247-2
Inventory: 297
DIODE SIL CARB 1.2KV 77A TO247-2
Inventory: 1186
DIODE SIL CARB 650V 8A TO220-2
Inventory: 498
DIODE SIL CARB 650V 10.1A TO220
Inventory: 185
SIC DISCRETE
Inventory: 57
DIODE SIL CARB 1.2KV 26A TO247-2
Inventory: 1213
SILICON CARBIDE (SIC) MOSFET - 1
Inventory: 269
DIODE SIL CARB 1.2KV 53A TO247-2
Inventory: 0
DIODE SIL CARB 1.2KV 50A TO247-2
Inventory: 15248
