- Product Model NVH4L015N065SC1
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SIC MOS TO247-4L 650V
- Classification Single FETs, MOSFETs
-
PDF
- 1 64.5
- 10 58.63
- 30 56.68
- 90 52.77
Technical Details
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 142A (Tc)
- Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
- Power Dissipation (Max) 500W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 25mA
- Supplier Device Package TO-247-4L
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 4790 pF @ 325 V
- Qualification AEC-Q101
Related Products
SIC MOSFET N-CH 71A TO247-4
Inventory: 0
SILICON CARBIDE (SIC) MOSFET - 1
Inventory: 269
SILICON CARBIDE (SIC) MOSFET - 1
Inventory: 342
SIC MOS D2PAK-7L 650V
Inventory: 800
SIC MOS TO247-4L 750V
Inventory: 242
SICFET N-CH 1200V 102A TO247
Inventory: 966
SIC MOS TO247-4L 650V
Inventory: 444
