- Product Model PJW3N10A_R2_00001
- Brand PANJIT
- RoHS Yes
- Description 100V N-CHANNEL ENHANCEMENT MODE
- Classification Single FETs, MOSFETs
-
PDF
- 2500 0.14
- 5000 0.13
- 12500 0.12
- 25000 0.12
- 62500 0.12
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
- Rds On (Max) @ Id, Vgs 310mOhm @ 2.2A, 10V
- Power Dissipation (Max) 3.1W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 508 pF @ 30 V
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