Technical Details

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount, Wettable Flank
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 270mA (Ta)
• Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V
• Power Dissipation (Max) 420mW (Ta), 4.2W (Tc)
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package DFN1110D-3
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) +12V, -20V
• Drain to Source Voltage (Vdss) 50 V
• Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 23.2 pF @ 25 V
• Qualification AEC-Q101