- Product Model ISZ080N10NM6ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V PG-TSDSON-8
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 6290
- 5000 0.72
- 10000 0.7
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 13A (Ta), 75A (Tc)
- Rds On (Max) @ Id, Vgs 8.04mOhm @ 20A, 10V
- Power Dissipation (Max) 3W (Ta), 100W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 36µA
- Supplier Device Package PG-TSDSON-8 FL
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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