Technical Details

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 62A (Tc)
• Rds On (Max) @ Id, Vgs 33mOhm @ 53A, 10V
• Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
• Vgs(th) (Max) @ Id 4V @ 5.55mA
• Supplier Device Package PG-TO220-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 236 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V