- Product Model PMEG2010EPASX
- Brand NXP Semiconductors
- RoHS No
- Description DIODE SCHOTTKY 20V 1A DFN2020D-3
- Classification Single Diodes
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Inventory:28500
Technical Details
- Package / Case 3-UDFN Exposed Pad
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 50 ns
- Technology Schottky
- Capacitance @ Vr, F 175pF @ 1V, 1MHz
- Current - Average Rectified (Io) 1A
- Supplier Device Package DFN2020D-3
- Operating Temperature - Junction 150°C (Max)
- Grade Automotive
- Voltage - DC Reverse (Vr) (Max) 20 V
- Voltage - Forward (Vf) (Max) @ If 375 mV @ 1 A
- Current - Reverse Leakage @ Vr 335 µA @ 20 V
- Qualification AEC-Q101