- Product Model BUK6E3R2-55C,127
- Brand NXP Semiconductors
- RoHS No
- Description NEXPERIA BUK6E3R2-55C - 120A, 55
- Classification Single FETs, MOSFETs
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Inventory:6473
Technical Details
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V
- Power Dissipation (Max) 306W (Tc)
- Vgs(th) (Max) @ Id 2.8V @ 1mA
- Supplier Device Package I2PAK
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±16V
- Drain to Source Voltage (Vdss) 55 V
- Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 15300 pF @ 25 V
- Qualification AEC-Q101