- Product Model PBSS4160PANPSX
- Brand NXP Semiconductors
- RoHS No
- Description NEXPERIA PBSS4160P - 60V, 1A NPN
- Classification Bipolar Transistor Arrays
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Inventory:28500
Technical Details
- Package / Case 6-UDFN Exposed Pad
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP
- Operating Temperature 150°C (TJ)
- Power - Max 370mW
- Current - Collector (Ic) (Max) 1A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V / 120 @ 500mA, 2V
- Frequency - Transition 175MHz, 125MHz
- Supplier Device Package DFN2020D-6
- Grade Automotive
- Qualification AEC-Q101